Magnesium-doped p-type GaN has been activated by irradiation with photons o
f 532 nm wavelength from the second harmonic of a Q-switched neodymium-dope
d ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence
levels and irradiation pulse numbers, such a laser-induced activation proce
ss resulted in a hole concentration about the same as that obtained through
the conventional thermal activation technique. Temperature measurement rev
ealed that the laser-induced process is very unlikely to be thermal. It was
speculated that the process might involve the photon-induced breaking of t
he H-Ma bonds.