The effect of chlorine on silicon oxidation: Simulation based on the interfacial silicon emission model

Silicon oxidation in dry oxygen containing small amounts (1-3%) of chlorine gas is simulated based on the interfacial silicon emission model. We assum e that the presence of chlorine (Cl) reduces the interfacial silicon emissi on, which governs the oxidation rate at the interface. The simulation is do ne by reducing the rate of Si-atom emission in the presence of Cl. In addit ion, the equilibrium concentration of oxygen in the oxide is increased in p roportion to Cl concentration to fit the experimental oxide thickness.