Silicon-based PbTiO3/Pb(Zr,Ti)O-3/PbTiO3 sandwich structure

A silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O-3/PbTiO3 (PT/PZT/PT) sandwich stru cture prepared by sol-gel method is proposed. The two PT layers in the stru cture are used as seeding layers to improve the crystallization of the PZT ferroelectric thin films. X-ray diffraction analysis (XRD) and Energy-dispe rsive X-ray spectroscopy (EDX) results show that the sandwiched PZT films a re well crystallized at lower temperature. Compared with the ferroelectric structure with only one PT seeding layer, the electrical and ferroelectric properties of the PZT films in the sandwich structure. are further improved . The maximum dielectric constant of about 900 is obtained at the coercive field 20 kV/cm, and the remnant polarization is 19 muC/cm(2). The leakage c urrent density is less than 5 x 10(-9) A/cm(2) as the applied voltage is be low 200kV/cm. The retained polarization does not reduce clearly after 8 x 1 0(9) read/write cycles.