The effect of the growth temperature on polyoxide by rapid thermal processing

A rapid thermal oxynitridation process using N2O gas as the oxidant has bee n developed. Due to a smoother polyoxide/polysilicon interface, polyoxide g rown by rapid thermal processing has better reliability than that of polyox ide grown by a conventional furnace. Moreover, in order to explore the effe cts of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown a t low temperatures has better reliability than polyoxides grown at high tem perature and exhibits improved characteristics such as higher breakdown ele ctric field, less gate voltage shift, and larger charger-to-breakdown.