New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

A new trap-assisted band-to-band tunneling (TAB) gate current model is prop osed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effec t transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET's with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.