Partial recovery of photodegradation at room temperature in hydrogenated amorphous silicon

Authors
Shimizu, T Maehara, T Mitani, M Kumeda, M
Citation
T. Shimizu et al., Partial recovery of photodegradation at room temperature in hydrogenated amorphous silicon, JPN J A P 1, 40(3A), 2001, pp. 1244-1245
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
3A
Year of publication
2001
Pages
1244 - 1245
Database
ISI
SICI code
Abstract
Detailed ESR measurements disclosed that neutral Si dangling bonds (DBs) cr eated by light soaking (LS) disappear partially at room temperature in a fe w hours after LS. In contrast metastable DBs created by thermal quenching r emain unchanged at room temperature. It is suggested that a part of the Si DBs created by LS have a small activation energy for thermal annealing.