beta-FeSi2 single crystals grown from solution

We have grown high-quality beta -FeSi2 bulk single crystals by a temperatur e gradient solution growth method using Ga solvent. Polyhedral shaped bulk crystals with clear facet planes were obtained below the growth temperature of 900 degreesC. Laue observation confirmed that crystals are high-quality single crystals without twins. Full-width at half maxim of the X-ray rocki ng curve at beta -FeSi2 (800) reflection was 53 arcsec. The conduction was p-type and the resistivity was 0.03-0.04 Omega cm at room temperature.