Behavior of thermally induced defects in heavily boron-doped silicon crystals

The effect of the first-step heat treatment temperature on the bulk microde fect (BMD) and oxidation-induced stacking fault (OiSF) formation in two kin ds of heavily boron-doped silicon wafers, with and without an OiSF ring are a, were investigated by comparing it with that in lightly boron-doped wafer s. The BMD density was observed to be higher in the heavily doped silicon t han in the lightly doped one at the same oxygen concentration. Unlike in th e lightly doron-doped silicon, in the heavily boron-doped silicon, OiSFs we re formed over the entire wafer surface regardless of the OiSF ring positio n when the first-step heat treatment was carried out at 900 degreesC.