Characteristics of Pb(Zr0.52Ti0.48)O-3 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared by pulsed laser deposition

The Pb(Zr0.52Ti0.48)O-3 ferroelectric films with a c-axis oriented Bi4Ti3O1 2 buffer layer were deposited on p-Si(100) substrate by pulsed laser deposi tion (PLD) technique. The Pb(Zr0.52Ti0.48)O-3 films were found to grow with a preferred orientation along (110) direction. Good ferroelectric properti es were obtained for a 400 nm thick Pb(Zr0.52Ti0.48)O-3/Bi4Ti3O12 film syst em with Au electrodes: P-t and E-c were 20 muC/cm(2) and 48 kV/cm respectiv ely. The memory window of capacitance-voltage (C-V) charactristics enlarged obviously and the current density reduced nearly two orders of magnitude a fter introducing the BIT buffer layer. The decay in remnant polarization wa s only 10% up to at least 10(9) bipolar switching cycles.