TiN films prepared by flow modulation chemical vapor deposition using TiCl4 and NH3

We propose a new chemical vapor deposition (CVD) process, the flow modulati on chemical vapor deposition (FMCVD) process, to obtain high quality titani um nitride (TiN) films at low deposition temperature in a single CVD chambe r. FMCVD uses sequential deposition and reduction processes, such as the de position of TiN films followed by chlorine reduction. This cycle was repeat ed to achieve sufficient film thickness. By decreasing the thickness in one cycle, the residual chlorine concentration and the resistivity of the film s decreased. Using FMCVD process, we could achieve low resistivity (250 mu Omega cm), low residual chlorine concentration (2 at.%) with uniform step c overage at low deposition temperature (380 degreesC).