We demonstrated continuous-wave lasing at room temperature in a photopumped
GaInAsP microdisk laser fabricated by Cl-2/Xe inductively coupled plasma e
tching, The minimum threshold pump power was as low as 30 muW. This value i
s 0.7 times the lowest threshold in the current injection device due to the
uniform carrier distribution by photopumping. Higher thermal resistance an
d odd-order azimuthal mode lasing as a result of a narrower pedestal and no
upper post structure were observed.