Low-threshold continuons-wave lasing in photopumped GaInAsP microdisk lasers

Citation
M. Fujita et al., Low-threshold continuons-wave lasing in photopumped GaInAsP microdisk lasers, JPN J A P 2, 40(8B), 2001, pp. L875-L877
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8B
Year of publication
2001
Pages
L875 - L877
Database
ISI
SICI code
Abstract
We demonstrated continuous-wave lasing at room temperature in a photopumped GaInAsP microdisk laser fabricated by Cl-2/Xe inductively coupled plasma e tching, The minimum threshold pump power was as low as 30 muW. This value i s 0.7 times the lowest threshold in the current injection device due to the uniform carrier distribution by photopumping. Higher thermal resistance an d odd-order azimuthal mode lasing as a result of a narrower pedestal and no upper post structure were observed.