Ultraviolet GaN single quantum well laser diodes

The ultraviolet laser diodes (LDs) whose active layers consisted of binary GaN were grown on epitaxially laterally overgrown GaN substrates by a metal organic chemical vapor deposition method. For the first time, we observed t he lasing emission from binary GaN active layer by current injection. The e mission wavelength of GaN single quantum well LDs was 366.9 nm under pulsed current injection and 369.0 nm under continuos-wave (cw) operation at room temperature. The threshold current density and voltage of these LDs under the 25 degreesC cw operation were 3.5 kA/cm(2) and 4.6 V, respectively. The estimated lifetime was approximately 2000 h under 25 degreesC cw operation at an output power of 2 mW.