Rugged metal electrode (RME) for high density memory devices

Rugged metal electrode (RME) was suggested and evaluated as a bottom electr ode of high-density memory, capacitors. Rugged ruthenium films (RME-Ru) wer e successfully fabricated through volume shrinking of ruthenium oxide films under reduction ambient (RuOx + H-2 = Ru + H2O). The effective surface are a of RME-Ru films was significantly enlarged due to the formation of wrinkl e on its surface, which resulted in low SiO2 equivalent thickness (Tox) as low as similar to 6 Angstrom with Ru/TaOx(110 Angstrom)/RME-Ru capacitor. I t is believed that RME technique will be very useful to realize and extend MIM (Metal-Insulator-Metal) capacitor era in the mass production of high de nsity memory devices.