Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors

The drain current versus gate voltage characteristics of metal-oxide-semico nductor field-effect transistors (MOSFETs) with a silicon quantum-dot (QD) layer floating gate have shown the unique hysteresis and current bumps whic h arise from the electron charging or discharging of the QDs with an averag e dot height of 5 nm. The drain current response to application of a single -pulse gate bias has revealed that the multiple-step charging of the QD lay er occurs until single electron occupation at each QD is achieved.