High-power CW operation of GaInAsP/InP superluminescent light-emitting diode with tapered active region

We have developed a 1.55 mum superluminescent light-emitting diode (SLID) w ith a tapered active region. We achieved high power and broadband operation demonstrating an output power of 330 mW under cw operation at 7 degreesC. We examined the beam profile of output light by measuring its near field an d far field patterns. It was found that the output light shows a fundamenta l transversal mode profile in both horizontal and vertical directions. This device will be applicable to spectrum-sliced multiwavelength light sources for use in wavelength division multiplexing optical communication systems as well as in lightwave sensing.