Citation
Jc. Caylor et al., Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition, J MATER RES, 16(9), 2001, pp. 2467-2470
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914
→ ACNP
Volume
16
Issue
9
Year of publication
2001
Pages
2467 - 2470
Database
ISI
SICI code
0884-2914(200109)16:9<2467:EGOS(T>2.0.ZU;2-2
Abstract
Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb
substrates was achieved by pulsed laser deposition using a substrate temper
ature of 270 degreesC and a bulk CoSb3 target with 0.75 at.% excess Sb. An
InSb (a(0)=0.6478 nm) substrate was chosen for its lattice registry with th
e antimonide skutterudites (e.g., CoSb3 with a(0)=0.9034 nm) on the basis o
f a presumed 45 degrees rotated relationship with the InSb zinc blende stru
cture. X-ray diffraction and transmission electron microscopy confirmed bot
h the structure of the films and their epitaxial relationship: (001)(CoSb 3
) parallel to (001)(InSb); [100](CoSb 3) parallel to [110](InSb).