Formation of YSi2-x layers on Si by high-current Y ion implantation

Authors
Wang, RS Cheng, XQ Lai, WS Liu, BX
Citation
Rs. Wang et al., Formation of YSi2-x layers on Si by high-current Y ion implantation, J PHYS D, 34(16), 2001, pp. 2465-2468
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
16
Year of publication
2001
Pages
2465 - 2468
Database
ISI
SICI code
0022-3727(20010821)34:16<2465:FOYLOS>2.0.ZU;2-5
Abstract
Yttrium ion implantation was conducted to synthesize Y-disilicide films on silicon wafers, using a metal vapour vacuum arc ion source and the continuo us and stable YSi2 films were directly obtained with neither external heati ng nor post-annealing. The formation mechanism of the YSi2 phase is also di scussed, in terms of the temperature rise caused by ion beam heating and th e ion dose in the process of implantation.