Toward the improvement of the microstructure of chemical vapor deposited aluminum on silicon carbide

This paper presents results on the chemical vapor deposition of aluminum on silicon carbide starting from triisobutylaluminum. The deposited films sho w important systematic trends in surface roughness and porosity. Considerin g literature information on, the deposition of aluminum on silicon, pretrea tments of the deposition surface with hydrofluoric acid and/or titanium tet rachloride have been tested. They lead to films with a smoother morphology and stronger adhesion with the substrate than in the case of an untreated s urface. Different heteroelements are observed at the interface under these conditions. A short thermal activation of the nucleation process following these pretreatments does not unambiguously improve the characteristics of t he aluminum films. The obtained results can be considered for the modificat ion of surface characteristics of silicon carbide particles which are used in discontinuously reinforcement aluminum composite materials with the aim to improve their mechanical properties and corrosion resistance as well as their fabrication process. (C) 2001 The Electrochemical Society.