Development of aluminum chemical mechanical planarization

The paper describes. the development of an aluminum chemical mechanical pla narization process that was successfully integrated into the dual damascene technology producing 1 Gb dynamic random access memory chips meeting all y ield and sheet resistance requirements. Three of the major problems of chem ical mechanical polishing of Al-0.5 Cu alloys, i.e., copper plate-out on ti tanium liners, array erosion, and slow polish rate were solved by adding Ce 4+ ions to the polishing slurry. (C) 200 The Electrochemical Society.