We investigate the recombination dynamics of photoexcited carriers in proto
n-bombarded InP crystals using near-infrared pump-THz-probe spectroscopy. T
he carrier lifetime is directly related to the proton dose and hence to the
induced trap density: In weakly damaged samples we observe a saturation of
the trap states for high-excitation densities. For highly damaged samples
the time-dependent THz transmission can be explained by taking into account
an Auger-assisted trapping process. (C) 2001 Optical Society of America.