A lumped transient thermal model for self-heating in MOSFETs

Both static and dynamic effects related to self-heating in MOSFETs (metal-o xide-silicon field effect transistors) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulato r in addition to a simple 2D finite difference code for the heat equation a re used as analysis tools. These tools are used both to justify the propose d model topology as well as to extract model parameters. Both static and dy namic effects predicted by the model are compared with existing experimenta l results. (C) 2001 Elsevier Science Ltd. All rights reserved.