MOSFET-based temperature sensor for standard BCD smart power technology

Authors
Miribel-Catala, P Montane, E Bota, SA Puig-Vidal, M Samitier, J
Citation
P. Miribel-catala et al., MOSFET-based temperature sensor for standard BCD smart power technology, MICROELEC J, 32(10-11), 2001, pp. 869-873
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
32
Issue
10-11
Year of publication
2001
Pages
869 - 873
Database
ISI
SICI code
0026-2692(200110/11)32:10-11<869:MTSFSB>2.0.ZU;2-A
Abstract
Two on-chip temperature sensors for smart power BCD technology were compare d. Temperature sensors based on bipolar transistors failed when DMOS power transistors were working under AC conditions because of substrate-coupled e ffects. An alternative MOSFET-based temperature sensor derived from a suppl y-independent CMOS bias source may overcome the problems associated with BC D technology. (C) 2001 Elsevier Science Ltd. All rights reserved.