METALLIC POINT CONTACTS FORMED BY PHYSICAL VAPOR-DEPOSITION AND CHEMICAL-VAPOR-DEPOSITION - MICROSCOPY STUDY AND POINT-CONTACT SPECTROSCOPY

Citation
Nn. Gribov et al., METALLIC POINT CONTACTS FORMED BY PHYSICAL VAPOR-DEPOSITION AND CHEMICAL-VAPOR-DEPOSITION - MICROSCOPY STUDY AND POINT-CONTACT SPECTROSCOPY, Low temperature physics, 23(7), 1997, pp. 554-560
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
1063777X
Volume
23
Issue
7
Year of publication
1997
Pages
554 - 560
Database
ISI
SICI code
1063-777X(1997)23:7<554:MPCFBP>2.0.ZU;2-#
Abstract
We have made an electron-microscopy study of nanoholes in membranes in successive stages of metal deposition using two different techniques: physical vapor deposition (PVD) and chemical vapor deposition (CVD). One-sided PVD (thermal evaporation) of gold and silver was used, as is relevant for heterocontacts. The key results in this case are: 1) the holes are not filled during deposition and 2) closing of the holes is accomplished by lateral growth of the film on the membrane. In the ca se of CVD of tungsten we found that nanoholes in membranes are filled at the beginning of the deposition, and that the process is capable of filling holes as small as 10 nm. Fabricated devices (alpha-tungsten) show good quality point-contact spectra which are characteristic of ba llistic transport through the constriction. A very interesting stepwis e current increase was observed for one amorphous tungsten point conta ct. (C) 1997 American Institute of Physics.