Analysis of a diode-pumped Nd : YVO4 laser passively Q switched with GaAs

Authors
Li, P Wang, QP Zhang, XY Wang, YR Li, SC He, JL Lu, XQ
Citation
P. Li et al., Analysis of a diode-pumped Nd : YVO4 laser passively Q switched with GaAs, OPT LASER T, 33(6), 2001, pp. 383-387
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
33
Issue
6
Year of publication
2001
Pages
383 - 387
Database
ISI
SICI code
0030-3992(200109)33:6<383:AOADN:>2.0.ZU;2-6
Abstract
A diode-pumped Nd : YVO4 laser passively Q switched with GaAs is studied th eoretically and experimentally. We have demonstrated the influence of singl e-photon absorption, two-photon absorption and free-carrier absorption in G aAs on the Q-switched pulse characteristics. The pulse profile, pulse energ y and pulse width of the Q switching with GaAs are simulated by using the c onventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whol e. (C) 2001 Published by Elsevier Science Ltd.