Growth orientation and surface morphology of CeO2 films deposited by PLD using different deposition atmospheres

We have deposited CeO2 films on yttrium stabilized zirconia < 100 > single crystal substrates by pulsed laser deposition using O-2 and Ar + 10%H-2 atm osphere. For the oxygen atmosphere, a pure c-axis orientation of CeO2 film was obtained within a substrate temperature range of 760-820 degreesC. For Ar + 10%H-2 atmosphere, the same pure c-axis orientation of the CeO2 film w as obtained over a much wider substrate temperature range of 350-775 degree sC. There are significant differences in the surface morphology between CeO 2 films deposited in O-2 and in Ar + 10%H-2,. atmospheres under the same co nditions. For CeO2 films deposited in O-2, the size and number of outgrowth formations is large, whilst for the CeO2 films deposited in Ar + 10%H-2, t he surface is smooth and there are very few large outgrowths. For CeO2 film deposited using an O-2 atmosphere there is a critical thickness of the fil m of approximately 200 rim, above which the surface roughness rapidly incre ases. The relationship between epitaxial temperature and surface roughness of CeO2 films is analyzed. (C) 2001 Elsevier Science B.V. All rights reserv ed.