Ion beam induced charge collection measurements performed on GaN based LEDs

Authors
Hirsch, L Barriere, AS Moretto, P
Citation
L. Hirsch et al., Ion beam induced charge collection measurements performed on GaN based LEDs, PHYS ST S-A, 186(3), 2001, pp. 461-469
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
186
Issue
3
Year of publication
2001
Pages
461 - 469
Database
ISI
SICI code
0031-8965(20010816)186:3<461:IBICCM>2.0.ZU;2-X
Abstract
GaN based LEDs were analyzed by the Ion Beam Induced Charge Collection tech nique. We describe the experimental setup and present the obtained results. The experimental maps provide details on the structural inhomogeneity of t he p-n junction and on the quality of the LED structure. Moreover, the tech nique made it possible to highlight the induced beam damages. Nevertheless the current-voltage curves and electroluminescence spectra were not affecte d by the ionic bombardments.