Electronic properties of AlxGa1-xAsySb1-y alloys lattice-matched to InAs

The electronic properties of zinc-blende AlxGa1-xAsySb1-y quaternary alloys lattice-matched to InAs have been investigated by using a pseudopotential method under the virtual crystal approximation, which takes into account th e effects of compositional variations in the calculations. The resulting ba nd structures at various Al concentrations x show quite nonlinear variation s for the main band gap energies and have been used to calculate the effect ive masses of the electron and heavy hole. A direct to indirect band gap cr ossover is found to occur at x = 0.28. We electron densities derived from p seudopotential calculations are also reported.