Impurity binding energy in polar quantum dot with finite potential barriers

Citation
B. El Amrani et al., Impurity binding energy in polar quantum dot with finite potential barriers, PHYS ST S-B, 226(2), 2001, pp. 393-402
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
226
Issue
2
Year of publication
2001
Pages
393 - 402
Database
ISI
SICI code
0370-1972(200108)226:2<393:IBEIPQ>2.0.ZU;2-C
Abstract
The impurity binding energy in the absence and in the presence of confined LO-phonon interaction in a cubic quantum dot for several values of the mass ratio A and for several heights of the barrier has been calculated using a variational approach. The quantum confinement is described by a finite pot ential well. The charge carrier (electron and ion)-phonon coupling is treat ed within the adiabatic approximation. The results show that this effect in creases, reaches a peak value and then decreases as the dot size increases and depends strongly on the impurity position. The confined LO-phonon effec t decreases by displacing the impurity from the center to the dot boundary.