Formation and properties of GeS2-Ga2S3-KX (X=Cl, Br, I) glasses

Citation
Dq. Wang et al., Formation and properties of GeS2-Ga2S3-KX (X=Cl, Br, I) glasses, PHYS C GLAS, 42(2), 2001, pp. 139-143
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
PHYSICS AND CHEMISTRY OF GLASSES
ISSN journal
00319090 → ACNP
Volume
42
Issue
2
Year of publication
2001
Pages
139 - 143
Database
ISI
SICI code
0031-9090(200104)42:2<139:FAPOG(>2.0.ZU;2-K
Abstract
The glass forming regions of GeS2-Ga2S3-KX (X=Cl, Br, I) system glasses wer e determined and homogeneous glasses it-ere prepared. The maximum content i n KI was 34 mol%. Their highest glass transition temperature (Td was 286 de greesC and optical transmission was from 0.45 to 11.5 mum. The transparent region of these glasses shifted towards shorter wavelengths after the addit ion of KX. The conductivity of these glasses was from 10(-11) to 10(-9)Scm( -1) at 23 degreesC. The chemical durability of these glasses was sufficient ly good for applications. These glasses are of interest as potential mid-in frared and waveguide materials.