On the excitonic absorption of the epitaxial CdTe thin films

Citation
I. Caraman et al., On the excitonic absorption of the epitaxial CdTe thin films, PHYS LOW-D, 7-8, 2001, pp. 1-8
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
7-8
Year of publication
2001
Pages
1 - 8
Database
ISI
SICI code
0204-3467(2001)7-8:<1:OTEAOT>2.0.ZU;2-O
Abstract
The absorption spectra of CdTe epitaxial thin films of 0.15-12 mum thicknes s deposited onto (0001) mica substrates were investigated in the 1.5-2.8 eV photon energy range. The spectral dependence of absorption coefficient in the temperature range of 78-300 K has been studied. Analysis of absorption coefficient data for 78 K reveals the existence of several excitonic peaks at the energies of 1.583 eV, 1.601 eV and 2.510 eV. The temperature increas e destroyed this fine structure and shifted the absorption edge towards the lower energies. The data are analyzed in connection with the energy band structure of CdTe crystal.