Citation
T. Deck et al., Photo-field-emission characteristics of semiconductor detector structures, PHYS LOW-D, 5-6, 2001, pp. 9-18
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467
→ ACNP
Volume
5-6
Year of publication
2001
Pages
9 - 18
Database
ISI
SICI code
0204-3467(2001)5-6:<9:PCOSDS>2.0.ZU;2-S
Abstract
Feasibility of the electron structure modification of a semiconductor emitt
er surface by a sub-monolayer that can be used to improve the photofield-em
ission properties of a semiconductor is demonstrated. For this aim the pecu
liarities of oxygen adsorption on the atomically clean germanium surface at
300 K and 77 K for various exposures are studied by field microscopy techn
ique. The electron energy distribution change caused by adsorption is measu
red for the atomically clean gallium arsenide surface.