Effect of the bulk LO-phonon on the binding energy of the hydrogenic impurity in a GaAs-Ga1-xAlxAs superlattice

Authors
Tayebi, L Fliyou, M Boughaleb, Y
Citation
L. Tayebi et al., Effect of the bulk LO-phonon on the binding energy of the hydrogenic impurity in a GaAs-Ga1-xAlxAs superlattice, PHYS LOW-D, 5-6, 2001, pp. 75-85
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
5-6
Year of publication
2001
Pages
75 - 85
Database
ISI
SICI code
0204-3467(2001)5-6:<75:EOTBLO>2.0.ZU;2-V
Abstract
The effect of the bulk Longitudinal-Optical (LO) phonon on the impurity bin ding energy in a GaAs-Ga1-xAlxAs superlattice has been calculated by using a variational approach. The charge carrier electron-phonon coupling is trea ted within the adiabatic approximation. The results show that this effects decreases as the well size increases.