Optical and electrical properties of In surface phases on Si(111)

Citation
Sa. Dotsenko et al., Optical and electrical properties of In surface phases on Si(111), PHYS LOW-D, 5-6, 2001, pp. 139-150
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
5-6
Year of publication
2001
Pages
139 - 150
Database
ISI
SICI code
0204-3467(2001)5-6:<139:OAEPOI>2.0.ZU;2-Q
Abstract
Investigation of optical and electrical properties of In/Si(111) system is presented. The In/Si(111) system was studied by differential reflectance sp ectroscopy. For each stable surface phase formed at T=410 degreesC the uniq ue spectrum of differential reflection is evidenced. The non-monotonous cha racter of dependence of the differential reflection coefficient on In cover age was found. The differential spectra for Si(111)root3 x root3-In and Si( 111)2x2-In surface phases were found to be very similar. Differential spect ra of Si(111)root7 x root3-In surface phase at 20 degreesC and at 410 degre esC have different shapes. The results of investigation of In/Si(111) syste m by differential reflectance spectroscopy are presented for the first time .