X-ray and luminescence analysis of finely dispersed beta-FeSi2 films formed on Si by pulsed ion treatment

Finely dispersed beta -FeSi2 films were formed by implanting Fe+ ions with an energy of 40 keV and a dose of 1 x 10(16) cm(-2) on Si single crystals, followed by nanosecond pulsed ion-beam treatment. The results of grazing x- ray diffraction indicate the formation of a highly grain-oriented film cons isting of inclusions of the iron silicide phase (beta -FeSi2) with a grain size of approximately 40 nm surrounded by a polycrystalline Si matrix. The photoluminescence spectroscopy data reveal that the photoluminescence signa l with a peak around 1.56 mum, which is observed up to 210 K, is associated with direct interband transitions in beta -FeSi2 and not with the contribu tion from the dislocation-induced line D1. (C) 2001 MAIK "Nauka/Interperiod ica".