INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS

Authors
MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation
Kd. Moiseev et al., INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS, Technical physics letters, 23(2), 1997, pp. 151-153
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
2
Year of publication
1997
Pages
151 - 153
Database
ISI
SICI code
1063-7850(1997)23:2<151:I(MBOB>2.0.ZU;2-E
Abstract
Laser structures based on broken-gap type II p-GaInAsSb/n-InGaAsSb het erojunctions in the active region are proposed and studied. Lasing at 3.2-3.4 mu m has been obtained in the temperature range 77-195 K with a threshold current density of 400 A/cm(2) at 77 K and a characteristi c temperature T-0=47 K. (C) 1997 American Institute of Physics.