The formation of a new field in the radiation physics of semiconductors and
semiconductor technology under the general guidance and with the direct pa
rticipation of the late A. V. Rzhanov is reviewed historically. This line o
f research gave rise to a multitude of practical applications; however, mos
t importantly, it forced scientists to radically change the established con
cepts of reactions in semiconductor crystals by taking into account the mob
ile defect-impurity subsystem susceptible to external factors. The concepts
developed form the basis for considering the processes at the atomic level
, especially during the formation and modification of active clusters and n
anoobjects. (C) 2001 MAIK "Nauka/ Interperiodica".