Atomic processes in semiconductor crystals

Authors
Citation
Ls. Smirnov, Atomic processes in semiconductor crystals, SEMICONDUCT, 35(9), 2001, pp. 985-987
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
9
Year of publication
2001
Pages
985 - 987
Database
ISI
SICI code
1063-7826(2001)35:9<985:APISC>2.0.ZU;2-7
Abstract
The formation of a new field in the radiation physics of semiconductors and semiconductor technology under the general guidance and with the direct pa rticipation of the late A. V. Rzhanov is reviewed historically. This line o f research gave rise to a multitude of practical applications; however, mos t importantly, it forced scientists to radically change the established con cepts of reactions in semiconductor crystals by taking into account the mob ile defect-impurity subsystem susceptible to external factors. The concepts developed form the basis for considering the processes at the atomic level , especially during the formation and modification of active clusters and n anoobjects. (C) 2001 MAIK "Nauka/ Interperiodica".