Investigation of Ge film growth on the Si(100) surface by recording diffractometry

A diagram of the structural and morphological state of a Ge film on a Si(10 0) surface is constructed using in situ recording of the reflection high-en ergy electron diffraction patterns. The diagram involves the following regi ons: the continuous film, hut- and dome-shaped clusters, and dome-shaped cl usters with misfit dislocations at the interface. The variation in the latt ice parameters of the Ge film during MBE growth on the Si(100) surface is m easured for the first time, and the oscillations of the variation in the la ttice parameter for the (100) plane during two-dimensional layer-by-layer g rowth are found. (C) 2001 MAIK "Nauka/ Interperiodica".