Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alt ernative substrates by molecular-beam epitaxy. Physical and chemical proces ses of growth and defect-generation mechanisms were studied for CdZnTe epit axy on atomically clean singular and vicinal surfaces of gallium-arsenide s ubstrates and CdHgTe films on CdZnTe/GaAs surfaces. ZnTe single-crystalline films were grown on silicon substrates. Methods for reducing the content o f defects in CdZnTe/GaAs and CdHgTe films were developed. Equipment for mol ecular-beam epitaxy was designed for growing the heteroepitaxial structures on large-diameter substrates with a highly uniform composition over the ar ea and their control in situ. Heteroepitaxial MCT layers with excellent ele ctrical parameters were grown on GaAs by molecular-beam epitaxy. (C) 2001 M AIK "Nauka/Interperiodica".