Germanium quantum dots in an unstrained GaAs/ZnSe/Ge/ZnSe heterosystem

Authors
Neizvestnyi, IG Suprun, SP Talochkin, AB Shumsky, VN Efanov, AV
Citation
Ig. Neizvestnyi et al., Germanium quantum dots in an unstrained GaAs/ZnSe/Ge/ZnSe heterosystem, SEMICONDUCT, 35(9), 2001, pp. 1088-1094
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
9
Year of publication
2001
Pages
1088 - 1094
Database
ISI
SICI code
1063-7826(2001)35:9<1088:GQDIAU>2.0.ZU;2-A
Abstract
Arrays of Ge quantum dots in unstrained GaAs/ZnSe/Ge heterostructures were obtained by molecular-beam epitaxy for the first time. Their spatial parame ters are examined by scanning tunneling microscopy, and their electronic st ructure is studied by Raman spectroscopy. (C) 2001 MAIK "Nauka/Interperiodi ca".