Experimental evidence for a spin-polarized ground state in the nu=5/2 fractional quantum Hall effect

Authors
Pan, W Stormer, HL Tsui, DC Pfeiffer, LN Baldwin, KW West, KW
Citation
W. Pan et al., Experimental evidence for a spin-polarized ground state in the nu=5/2 fractional quantum Hall effect, SOL ST COMM, 119(12), 2001, pp. 641-645
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
119
Issue
12
Year of publication
2001
Pages
641 - 645
Database
ISI
SICI code
0038-1098(2001)119:12<641:EEFASG>2.0.ZU;2-K
Abstract
We study the v = 5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate fie ld-effect transistor (HIGFET). The electron density can be tuned from n = 0 -7.6 X 10(11) Cm with a peak mobility mu = 5.5 X 10(6) cm(2) Vs(-1). The v = 5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at v = 5/2. (C) 2001 Els evier Science Ltd. All rights reserved.