Vl. Berkovits et al., Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces, SOL ST COMM, 119(12), 2001, pp. 647-651
Oxidized (001) surfaces of both GaAs crystals and Ga0.7Al0.3As alloys are f
ound to exhibit characteristic reflectance anisotropy (RA) spectra in the r
ange 1.5-5.5 eV. A microstructure model of GaAs/oxide interface is proposed
to treat the observed spectra within a quasi-microscopic theory of reflect
ance anisotropy developed for multilayer dielectric arrangements. Quantitat
ive agreement between measured and calculated RA spectra shows the principa
l spectral features to be related to local-field effects at the GaAs/oxide
interface, which is typical of A(3)B(5) compounds. (C) 2001 Elsevier Scienc
e Ltd. All rights reserved.