Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces

Authors
Berkovits, VL Gordeeva, AB Kosobukin, VA
Citation
Vl. Berkovits et al., Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces, SOL ST COMM, 119(12), 2001, pp. 647-651
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
119
Issue
12
Year of publication
2001
Pages
647 - 651
Database
ISI
SICI code
0038-1098(2001)119:12<647:LEIRAS>2.0.ZU;2-9
Abstract
Oxidized (001) surfaces of both GaAs crystals and Ga0.7Al0.3As alloys are f ound to exhibit characteristic reflectance anisotropy (RA) spectra in the r ange 1.5-5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of reflect ance anisotropy developed for multilayer dielectric arrangements. Quantitat ive agreement between measured and calculated RA spectra shows the principa l spectral features to be related to local-field effects at the GaAs/oxide interface, which is typical of A(3)B(5) compounds. (C) 2001 Elsevier Scienc e Ltd. All rights reserved.