Development and advantages of step-and-flash lithography

A yet unheralded alternative for future lithography, step-and-flash imprint lithography, appears to be an inexpensive method for pattern generation ca pable of sub-100nm resolution on silicon wafers. Researchers at the Univers ity of Texas have been analyzing various process options on a too[ in place there and have shown that this process has several advantages over compara ble compression imprinting techniques for applications that require precisi on layer-to-layer alignment error measurement. It is capable of high-resolu tion patterning at room temperature with 2-3 pounds applied pressure. The p rocess uses chemicals that are commercially available for sub-100nm pattern s. Development work has been so promising that commercialization is under w ay.