Catalytic technology for PFC emissions control

Citation
Rs. Brown et al., Catalytic technology for PFC emissions control, SOL ST TECH, 44(7), 2001, pp. 189
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
44
Issue
7
Year of publication
2001
Database
ISI
SICI code
0038-111X(200107)44:7<189:CTFPEC>2.0.ZU;2-9
Abstract
Catalytic technology offers a low-cost means of controlling PFC emissions w ithout impacting the semiconductor-manufacturing process. Greater than 99% destruction of C-1 to C-4 PFCs can be achieved at temperatures of 650-700 d egreesC, while PFCs such as NF3 and SF6 can be destroyed at significantly l ower temperatures using a novel PFC abatement catalyst. Laboratory and fiel d studies demonstrate that the catalyst is stable, with the ability to main tain high destruction efficiency for an extended period of time. Although s table, the presence of SiF4 in the feed stream poisons the catalyst, necess itating that it be scrubbed upstream of the catalyst bed. Cost of ownership analysis indicates that a catalytic PFC abatement process can treat PFC em issions from etch and CVD tools for $0.20-0.25/wafer.