A segmented anode, npn controlled lateral insulated gate bipolar transistor

Authors
Hardikar, S Xu, YZ De Souza, MM Narayanan, EMS
Citation
S. Hardikar et al., A segmented anode, npn controlled lateral insulated gate bipolar transistor, SOL ST ELEC, 45(7), 2001, pp. 1055-1058
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
7
Year of publication
2001
Pages
1055 - 1058
Database
ISI
SICI code
0038-1101(200107)45:7<1055:ASANCL>2.0.ZU;2-A
Abstract
A fast switching area efficient segmented npn anode lateral insulated gate bipolar transistor is proposed. Segments of p(+) and npn are incorporated a t the anode along the width in the third dimension instead of placing them linearly along the drift length of the device. The p-base parameters of the npn segment and the ratio of the p(+) and npn segments are found to strong ly influence the switching behaviour. (C) 2001 Elsevier Science Ltd. All ri ghts reserved.