Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET

Authors
Dermoul, I Chekir, F Ben Salem, M Kalboussi, A Maaref, H
Citation
I. Dermoul et al., Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET, SOL ST ELEC, 45(7), 2001, pp. 1059-1065
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
7
Year of publication
2001
Pages
1059 - 1065
Database
ISI
SICI code
0038-1101(200107)45:7<1059:DLIIAC>2.0.ZU;2-N
Abstract
The pseudomorphic AlGaAs/InGaAs/GaAs MODFET, intended for future applicatio ns in cryoelectronics. has been investigated. In the temperature range of 1 0-350 K no collapse nor Kink effect have been detected. However, a threshol d shift has been observed which is thought to be associated with electrical ly active defects in the heterostructure. The related deep levels are direc tly characterized by two electrical techniques: capacitance deep level tran sient spectroscopy and drain current transient spectroscopy. Experimental r esults establish the complementarity of both techniques. (C) 2001 Elsevier Science Ltd. All rights reserved.