New procedure for the extraction of basic a-Si : H TFT model parameters inthe linear and saturation regions

A new procedure is proposed to extract basic parameters for the AIM-Spice a morphous thin film transistor model in the above-threshold region. Our meth od avoids non-linear optimization, which is mainly the method utilized up t o now. when using a program extractor included in AIM-Spice. The present ex traction procedure is based on the integration of the experimental data cur rent. The integration method as in known is convenient to decrease the effe cts of experimental noise. The method is applied to the linear and saturati on regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. The accuracy of the simulated curves using the parameters extracted with the new procedure is verified with measured a nd calculated data using the expressions contained in the model. (C) 2001 E lsevier Science Ltd. All rights reserved.