SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current

A new diode structure, called planar MOS-Schottky Diode (MOSSD), is propose d to reduce the reverse leakage current in SiC Schottky diode. The reverse leakage current has been reduced by one order of magnitude by using the MOS SD structure while the reverse breakdown characteristic is improved from so ft breakdown to abrupt breakdown. Further, measurements on MOSSDs with thic k and thin oxide MOS regions indicate that the forward current through a MO SSD with a thin oxide can be up to 90% that through a conventional Schottky diode without buried MOS structures. From high temperature measurements it is evident that the reverse characteristics of MOSSDs have less temperatur e dependence compared to pure Schottky diodes. (C) 2001 Elsevier Science Lt d. All rights reserved.