Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

Authors
Luo, B Johnson, JW Schoenfeld, D Pearton, SJ Ren, F
Citation
B. Luo et al., Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures, SOL ST ELEC, 45(7), 2001, pp. 1149-1152
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
7
Year of publication
2001
Pages
1149 - 1152
Database
ISI
SICI code
0038-1101(200107)45:7<1149:SORIRM>2.0.ZU;2-J
Abstract
The effects of lambda -ray irradiation on GaAs MESFETs were studied. The la mbda -ray irradiation was generated from a Co-60 source. DC characteristics of the MESFETs were used to monitor the effects of radiation, which includ ed source-drain I-V characteristics, gate leakage current, saturation drain current, sub-threshold gate leakage current, and sheet resistance. These c hanges of device characteristics provided us a useful method to determine t he radiation damage coefficient. (C) 2001 Elsevier Science Ltd. All rights reserved.