Surface decomposition of triethylindium on InSb(100)

Citation
K. Yong et Jg. Ekerdt, Surface decomposition of triethylindium on InSb(100), SURF SCI, 490(1-2), 2001, pp. 13-19
Citations number
31
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
490
Issue
1-2
Year of publication
2001
Pages
13 - 19
Database
ISI
SICI code
0039-6028(20010901)490:1-2<13:SDOTOI>2.0.ZU;2-6
Abstract
The surface reactions of triethylindium on InSb(1 0 0)-c(8 X 2) were studie d using temperature programmed desorption (TPD) and static secondary ion ma ss spectroscopy. Adsorbed diethylindium, monoethylindium and ethyl were the main surface products after triethylindium chemisorbed at 350 K. Diethylin dium desorbs from the surface at temperatures below 450 K. Ethyl groups und ergo hydride elimination to ethylene and homolysis to ethyl radicals at two temperatures during TPD, 450 and 480 K. The 450 K desorption feature is as sociated with adsorbed monoethylindium. Adsorbed ethyl ligands, formed duri ng dissociative adsorption, migrate to lattice In atoms and desorb at 480 K through homolysis and beta -hydride elimination at these lattice sites. (C ) 2001 Elsevier Science B.V. All rights reserved.