PSpice-Model for a CMOS-compatible stress sensor based on the anisotropy of the piezoresistive effect

A new model for the simulation of a CMOS-compatible stress sensor based on the anisotropy of the piezoresistive effect is presented. The sensor is mod eled as a quadripole network the electrical properties of which depend amon g others on mechanical stress, temperature and magnetic field. The model ca n be incorporated into a PSpice-model and used for the development of signa l conditioning circuits. The model parameters are verified through measurem ents. In order to demonstrate the advantages of the model an application ci rcuit for temperature compensation is simulated and verified.